IndiumV3, Chine, Analysis, bibRecord, 002260

Nanosecond laser annealing of zinc-doped indium phosphide

Identifieur interne : 002260 ( Chine/Analysis ); précédent : 002259; suivant : 002261

Nanosecond laser annealing of zinc-doped indium phosphide

Auteurs : RBID : Pascal:99-0295577

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Semiconducteur III-V, Composé binaire, Indium phosphure, Matériau dopé, Addition zinc, Recuit faisceau laser, Laser pulsé, Recristallisation, Epitaxie, Hétérodiffusion, Diffusion(transport), 6172S, InP:Zn, In P.

English descriptors

KwdEn :
- Binary compounds, Diffusion, Doped materials, Epitaxy, Experimental study, III-V semiconductors, Impurity diffusion, Indium phosphides, Laser beam annealing, Pulsed lasers, Recrystallization, Zinc additions.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 014E53
to stream Main, to step Repository: 014D24
to stream Chine, to step Extraction: 002260

Links to Exploration step

Pascal:99-0295577

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Nanosecond laser annealing of zinc-doped indium phosphide</title>
<author><name sortKey="Ivlev, G D" uniqKey="Ivlev G">G. D. Ivlev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electronics, Belarussian Academy of Sciences, Lagoiskii trakt 22</s1>
<s2>Minsk, 220090</s2>
<s3>BLR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Biélorussie</country>
<wicri:noRegion>Minsk, 220090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Markevich, M I" uniqKey="Markevich M">M. I. Markevich</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electronics, Belarussian Academy of Sciences, Lagoiskii trakt 22</s1>
<s2>Minsk, 220090</s2>
<s3>BLR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Biélorussie</country>
<wicri:noRegion>Minsk, 220090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chaplanov, A M" uniqKey="Chaplanov A">A. M. Chaplanov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electronics, Belarussian Academy of Sciences, Lagoiskii trakt 22</s1>
<s2>Minsk, 220090</s2>
<s3>BLR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Biélorussie</country>
<wicri:noRegion>Minsk, 220090</wicri:noRegion>
</affiliation>
</author>
<author><name>CHEN CHAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Xiamen University</s1>
<s2>Xiamen</s2>
<s3>CHN</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Xiamen University</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bayazitov, R M" uniqKey="Bayazitov R">R. M. Bayazitov</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Physicotechnical Institute, Tatar Academy of Sciences</s1>
<s2>Kazan, Tatarstan</s2>
<s3>RUS</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Kazan, Tatarstan</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">99-0295577</idno>
<date when="1999">1999</date>
<idno type="stanalyst">PASCAL 99-0295577 INIST</idno>
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<seriesStmt><idno type="ISSN">0020-1685</idno>
<title level="j" type="abbreviated">Inorg. mater.</title>
<title level="j" type="main">Inorganic materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Diffusion</term>
<term>Doped materials</term>
<term>Epitaxy</term>
<term>Experimental study</term>
<term>III-V semiconductors</term>
<term>Impurity diffusion</term>
<term>Indium phosphides</term>
<term>Laser beam annealing</term>
<term>Pulsed lasers</term>
<term>Recrystallization</term>
<term>Zinc additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Semiconducteur III-V</term>
<term>Composé binaire</term>
<term>Indium phosphure</term>
<term>Matériau dopé</term>
<term>Addition zinc</term>
<term>Recuit faisceau laser</term>
<term>Laser pulsé</term>
<term>Recristallisation</term>
<term>Epitaxie</term>
<term>Hétérodiffusion</term>
<term>Diffusion(transport)</term>
<term>6172S</term>
<term>InP:Zn</term>
<term>In P</term>
</keywords>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0020-1685</s0>
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<fA03 i2="1"><s0>Inorg. mater.</s0>
</fA03>
<fA05><s2>35</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Nanosecond laser annealing of zinc-doped indium phosphide</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>IVLEV (G. D.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MARKEVICH (M. I.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>CHAPLANOV (A. M.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>CHEN CHAO</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>BAYAZITOV (R. M.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Electronics, Belarussian Academy of Sciences, Lagoiskii trakt 22</s1>
<s2>Minsk, 220090</s2>
<s3>BLR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Xiamen University</s1>
<s2>Xiamen</s2>
<s3>CHN</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Physicotechnical Institute, Tatar Academy of Sciences</s1>
<s2>Kazan, Tatarstan</s2>
<s3>RUS</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>309-312</s1>
</fA20>
<fA21><s1>1999</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
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<fA44><s0>0000</s0>
<s1>© 1999 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>10 ref.</s0>
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<fA47 i1="01" i2="1"><s0>99-0295577</s0>
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<fA60><s1>P</s1>
<s3>V</s3>
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<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Inorganic materials</s0>
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<fA66 i1="01"><s0>USA</s0>
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<fA99><s0>Trad. de: Neorganicheskie Materialy, RU, 35, 4, 391-395</s0>
</fA99>
<fC02 i1="01" i2="3"><s0>001B60A72S</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Addition zinc</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Zinc additions</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Recuit faisceau laser</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Laser beam annealing</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Laser pulsé</s0>
<s5>08</s5>
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<s5>08</s5>
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<fC03 i1="09" i2="3" l="FRE"><s0>Recristallisation</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Recrystallization</s0>
<s5>10</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Epitaxie</s0>
<s5>11</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Epitaxy</s0>
<s5>11</s5>
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<fC03 i1="11" i2="X" l="FRE"><s0>Hétérodiffusion</s0>
<s5>12</s5>
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<fC03 i1="11" i2="X" l="ENG"><s0>Impurity diffusion</s0>
<s5>12</s5>
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<fC03 i1="11" i2="X" l="SPA"><s0>Heterodifusión</s0>
<s5>12</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>Diffusion(transport)</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Diffusion</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>6172S</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>InP:Zn</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>93</s5>
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<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>17</s5>
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<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>17</s5>
</fC07>
<fN21><s1>186</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |texte=   Nanosecond laser annealing of zinc-doped indium phosphide
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Nanosecond laser annealing of zinc-doped indium phosphide

Nanosecond laser annealing of zinc-doped indium phosphide

Descripteurs français

English descriptors

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri